碳化硅功率器件的最新发展和应用

碳化硅功率器件的最新发展和应用Jimmy Liu Cree Power Application Engineering Mar 2013

CONFIDENTIAL

Cree: the world’s largest WBG company

25 Years of SiC and GaN wide bandgap wafer, epi and device experience.

Founded in 1987 Public since 1993 (Nasdaq: CREE) Headquartered in Durham, NC Strong patent portfolio—848 U.S. patents and 1459 foreign patents

Global Reach 12 major locations 5400 employees Fiscal 2012 Revenues$1.2B

Copyright© 2012, Cree, Inc. Confidential

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Cree Businesses

Cree SiC/GaN Materials

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Proof of technology leadershipThe Cree IP portfolio& scale is large enough to provide indemnity that matters.

Issued Patents U.S. Non-U.S. Total 848 1,459 2,307

Pending Applications 878 2,213 3,091

Note: All totals include exclusively licensed patents

Copyright© 2012, Cree, Inc. Confidential

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Confidential

Cree is SiC powerOur mission: Revolutionize the power semiconductor industry with the most energy efficient devices

Cree will replace silicon power discrete devices for blocking voltages>600V

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SiC power enables higher efficiency, lower costSiC power semiconductors are superior to silicon in 3 critical properties:– Wider bandgap: SiC supports 10 times higher electric fields than Si– Higher thermal conductivity: SiC supports 3 times the power density of Si– Reliability: 10X better than silicon

Above 600V, these properties enable SiC to provide lower loss and higher efficiency devices Schottky diodes instead of p-i-n diodes MOSFETS instead of IGBTs

Higher frequency of operation→ lower BOM costConfidential

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Leadership in wafer and epi

100mm

150mm

Cree makes more than 90% of the world’s SiC wafers Cree sells wafers to most SiC power device competitors Cree developed the world’s first production 150mm SiC wafers LED 150mm line built, tested and running

Wafer and Epi IP - 99 US patents,17 pending - 195 non-US patents, 69 pending

Copyright© 2012, Cree, Inc.Confidential

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SiC Power: From niche to mainstream

INDUSTRIAL POWER

EV& CHARGER

PC POWER

LIGHTNING

SIZE OF MARKET IN 20 14:$595M

MOTOR

Mainstream applications where efficiency is valuedSERVER HVAC

TRACTION

SOLA R

New products and cost reductions enable Niche applications where efficiency is required

>

>

TELECOM

Copyright© 2011, Cree, Inc. Confidential

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SiC power product portfolioThe Z-RecTM Rectifier family600V Junction Barrier Schottky (JBS) Diodes 1, 2, 3, 4, 6, 8, 10& 20A 1.7A, 600V in“QFN” Package 650V JBS Diodes 4, 6, 8, 10& 20A 1200V JBS Diodes 2, 5, 7.5, 10, 15, 20, 30& 40A 1700V JBS Diodes 10& 25A

The Z-FETTM MOSFET family1200V SiC DMOS FET 80m & 160m available today

New: 50 Amp 1200V and 1700V 2nd generation MOSFETs released coming soon 1ohm 1700V MOSFE

T also in March

New: 50 Amp JBS Diodes 650V, 1200V and 1700V released coming soon

PackagesTHROUGH HOLE: TO-220, Fully molded TO-220, TO247 SMT: TO-252 (D-Pak), TO-263 (D2-Pak)Copyright© 2012, Cree, Inc.Confidential

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New SiC MOSFETs:D

Z-FETTM

VDS (V) 1200 1200

RDS(on) (m )@VGS= 20 V 160 80

ID (A)@TC=100C 13 24

CMF10120DG S

CMF20120D

To-247 and bare die for your power module maker

Silicon Carbide Power DMOSFETN-Channel Enhancement Mode

2400

1800

Features: Low, stable RDS(on) Fast switching times Low capacitances Easy to Parallel Simple to Drive1200

SiC MOSFETZ-FET

Si IGBT600

Si MOSFET

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Cree SiC MOSFETs Replace Silicon IGBTs

SiC MOSFET Reduces EOFFSwitching Losses (µJ)Eliminate IGBT tail current

Turn On Temp. (°C) 25 50 75 100 SiC DMOS 423 381 369 362 352 348 Si IGBT 303 335 373 413 455 500

Turn Off SiC DMOS 84 82 87 96 104 109 Si IGBT 973 1310 1710 2240 2980 3990

Switching at 150°CSwitching Energies SiC DMOSFET: 457µJ Si IGBT: 4490µJ

125 150

SiC MOSFET vs Si IGBT (IRG4PH40KD)

Copyright© 2012, Cree, Inc. Confidential

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Cree SiC MOSFET enables high speed switching for big power30 kHz Hard Switched Application

100%

CMF20120D99% Efficiency (excluding magnetics) (%)

Cree SiC MOSFETs handles more current at higher efficiency

98%

97%

96%

Comparison Conditions:APT28M120B31200V silicon MOSFET

IGW40N120H3(State of the art IGBT)

95%

Switching Freq= 30 kHz Switch Voltage= 800V Duty cycle= 50%→ Avg current=½ peak current

94% 0 5 10 15 20 Peak Switch Current@ 50% Du (A) 25 30

Magnetics losses not included in efficiency calculationCopyright© 2012, Cree, Inc. Confidential

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Device Power Loss vs. Frequency1000

Si MOSFET

Power Loss (W)

100

Z-FET 10x lower conduction losses than Si MOSFET

Z-FET 3x higher operating frequency than Si IGBT with the same efficiency

10 0.1 1 Frequency (kHz) 10 100

Comparison Conditions: Copyright© 2012, Cree, Inc. Confidential

Operating Voltage= 800V Current= 20A peak, 10A avg Device Case Temp= 100°C Device Junction Temp= 150°Cpg. 14

10KW High Efficiency and High Frequency Boost DC/DC Design Specifications with Full SiC Power Devices Specifications:1. 2. 3. 4. 5. 6. Output Power 10kW Input voltage range: 300Vdc~450Vdc Bus Voltage: 450Vdc~650Vdc Operating frequency for BOOST: 60KHZ-100KHZ Target efficiency for BOOST:>99% Applications: PV Solar Inverter and DC/DC converterD G D S

G S

Solar Panel

MPPT Boost StageCopyright© 2013, Cree, Inc. Confidential

Inverter Stage

Cree Demo Board of Cree 10KW (2x5KW) Interleaved Boost Converter

245mmx140mmx90mm(No include Inductor and output capacitor)

Copyright© 2013, Cree, Inc.

Confidential