NTD4809NH-1G中文资料

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NTD4809NHPower MOSFET

30 V, 58 A, Single N Channel, DPAK/IPAK

Features

Low RDS(on) to Minimize Conduction LossesLow Capacitance to Minimize Driver Losses

Optimized Gate Charge to Minimize Switching LossesThese are Pb Free Devices

Applications

CPU Power Delivery DC DC Converters Low Side Switching

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Parameter

Drain to Source VoltageGate to Source VoltageContinuous Drain

Current (RqJA) (Note 1)Power Dissipation(RqJA) (Note 1)Continuous Drain

Current (RqJA) (Note 2)Power Dissipation(RqJA) (Note 2)Continuous DrainCurrent (RqJC)(Note 1)

Power Dissipation(RqJC) (Note 1)Pulsed Drain Current

tp=10ms

Current Limited by Package

TA = 25°CTA = 85°CTA = 25°CTA = 25°C

SteadyState

TA = 85°CTA = 25°CTC = 25

°CTC = 85°CTC = 25°CTA = 25°CTA = 25°C

PDIDMIDmaxPkgTJ, TstgISdV/dtEASPDIDPDIDSymbolVDSSVGSID

Value30"20

11.59.02.09.07.01.358455213045 55 to175436.0112.5

WAA°CAV/nsmJWAWAUnitVVA

Operating Junction and Storage TemperatureSource Current (Body Diode)Drain to Source dV/dt

Single Pulse Drain to Source AvalancheEnergy (VDD = 24 V, VGS = 10 V,L = 1.0 mH, IL(pk) = 15 A, RG = 25 W)Lead Temperature for Soldering Purposes(1/8″ from case for 10 s)

TL

260°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the RecommendedOperating Conditions is not implied. Extended exposure to stresses above theRecommended Operating Conditions may affect device reliability.

ORDERING INFORMATION

See detailed ordering and shipping information in the packagedimensions section on page 6 of this data sheet.