BT136-600E中文资料

Triacs

sensitive gate

GENERAL DESCRIPTION

Passivated,sensitivegatetriacsinaplasticenvelope,intendedforuseingeneralpurposebidirectionalswitchingandphasecontrolapplications,wherehighsensitivityisrequiredinallfourquadrants.

BT136 series E

QUICK REFERENCE DATA

SYMBOLVDRMIT(RMS)ITSM

PARAMETER

BT136-Repetitive peak off-statevoltages

RMS on-state current

Non-repetitive peak on-statecurrent

MAX.600E600425

MAX.800E800425

UNITVAA

PINNING - TO220AB

PIN CONFIGURATION

SYMBOL

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).SYMBOLVDRMIT(RMS)ITSM

PARAMETER

Repetitive peak off-statevoltages

RMS on-state currentNon-repetitive peakon-state currentI2t for fusing

Repetitive rate of rise ofon-state current aftertriggering

full sine wave; Tmb ≤ 107 C

full sine wave; Tj = 25 C prior tosurget = 20 mst = 16.7 mst = 10 ms

ITM = 6 A; IG = 0.2 A;dIG/dt = 0.2 A/µs

T2+ G+T2+ G-T2- G-T2- G+CONDITIONS

MIN.--------------40--6006001

425273.1505050102550.5150125MAX.

-800800

UNITVAAAA2sA/µsA/µsA/µsA/µsAVWW C C

I2tdIT/dt

IGMVGMPGMPG(AV)TstgTj

Peak gate currentPeak gate voltagePeak gate powerAverage gate powerStorage temperatureOperating junctiontemperature

over any 20 ms period

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac mayswitch to the on-state. The rate of rise of current should not exceed 3 A/µs.

Triacs

sensitive gate

THERMAL RESISTANCES

SYMBOLRth j-mbRth j-a

PARAMETER

CONDITIONS

MIN.---

BT136 series E

TYP.--60

MAX.3.03.7-

UNITK/WK/WK/W

Thermal resistancefull cyclejunction to mounting basehalf cycleThermal resistancein free airjunction to ambient

STATIC CHARACTERISTICS

Tj = 25 C unless otherwise statedSYMBOLIGT

PARAMETERGate trigger current

CONDITIONSVD = 12 V; IT = 0.1 A

T2+ G+T2+ G-T2- G-T2- G+T2+ G+T2+ G-T2- G-T2- G+

MIN.-----------0.25-TYP.2.54.05.0113.0102.54.02.21.40.70.40.1

MAX.1010102515201520151.701.5-0.5

UNITmAmAmAmAmAmAmAmAmAVVVmA

IL

Latching current

VD = 12 V; IGT = 0.1 A

IHVTVGTID

Holding currentOn-state voltageGate trigger voltageOff-state leakage current

VD = 12 V; IGT = 0.1 AIT = 5 A

VD = 12 V; IT = 0.1 A

VD = 400 V; IT = 0.1 A; Tj = 125 CVD = VDRM(max); Tj = 125 C

DYNAMIC CHARACTERISTICS

Tj = 25 C unless otherwise statedSYMBOLdVD/dttgt

PARAMETERCritical rate of rise ofoff-state voltage

Gate controlled turn-ontime

CONDITIONS

VDM = 67% VDRM(max); Tj = 125 C;

exponential waveform; gate open circuitITM = 6 A; VD = VDRM(max); IG = 0.1 A;dIG/dt = 5 A/µs

MIN.--TYP.502

MAX.--UNITV/µsµs

Triacs

sensitive gate

BT136 series E

Triacs

sensitive gate

BT136 series E

IH(Tj)dVD/dt (V/us)

1000

32.521.510.5

100

10

0-50

50100150

1

050

Tj / C

100150

Fig.9. Normalised holding current IH(Tj)/ IH(25 C),

versus junction temperature Tj.Fig.12. Typical, critical rate of rise of off-state voltage,

dVD/dt versus junction temperature Tj.

Triacs

sensitive gate

MECHANICAL DATA

BT136 series E

Notes

1. Refer to mounting instructions for SOT78 (TO220) envelopes.2. Epoxy meets UL94 V0 at 1/8".

Triacs

sensitive gate

BT136 series E

DEFINITIONS

DATA SHEET STATUSDATA SHEETSTATUS2Objective data

PRODUCTSTATUS3Development

DEFINITIONS

This data sheet contains data from the objective specification forproduct development. Philips Semiconductors reserves the right tochange the specification in any manner without notice

This data sheet contains data from the preliminary specification.Supplementary data will be published at a later date. Philips

Semiconductors reserves the right to change the specification withoutnotice, in ordere to improve the design and supply the best possibleproduct

This data sheet contains data from the product specification. PhilipsSemiconductors reserves the right to make changes at any time inorder to improve the design, manufacturing and supply. Changes willbe communicated according to the Customer Product/ProcessChange Notification (CPCN) procedure SNW-SQ-650A

Preliminary dataQualification

Product dataProduction

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above oneor more of the limiting values may cause permanent damage to the device. These are stress ratings only andoperation of the device at these or at any other conditions above those given in the Characteristics sections ofthis specification is not implied. Exposure to limiting values for extended periods may affect device reliability.Application information

Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 2001

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of thecopyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to beaccurate and reliable and may be changed without notice. No liability will be accepted by the publisher for anyconsequence of its use. Publication thereof does not convey nor imply any license under patent or otherindustrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of theseproducts can be reasonably expected to result in personal injury. Philips customers using or selling these productsfor use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resultingfrom such improper use or sale.

2 Please consult the most recently issued datasheet before initiating or completing a design.

3 The product status of the device(s) described in this datasheet may have changed since this datasheet waspublished. The latest information is available on the Internet at URL http://.