DG413中文资料

元器件交易网

Monolithic Quad SPST, CMOS AnalogSwitches

The DG411 series monolithic CMOS analog switches aredrop-inreplacements for the popular DG211 and DG212series devices. They include four independent single polethrow (SPST) analog switches, and TTL and CMOScompatible digital inputs.

These switches feature lower analog ON resistance (<35 )and faster switch time (tON < 175ns) compared to theDG211 or DG212. Charge injection has been reduced,simplifying sample and hold applications.

The improvements in the DG411 series are made possibleby using a high voltage silicon-gate process. An epitaxiallayer prevents the latch-up associated with older CMOStechnologies. The 44V maximum voltage range permitscontrolling 40VP-P signals. Power supplies may be

single-ended from +5V to +34V, or split from±5V to±20V.The four switches are bilateral, equally matched for AC orbidirectional signals. The ON resistance variation with

analog signals is quite low over a ±15V analog input range.The switches in the DG411 and DG412 are identical,

differing only in the polarity of the selection logic. Two of theswitches in the DG413 (#1 and #4) use the logic of the

DG211andDG411(i.e.,alogic“0”turnstheswitchON)andtheothertwoswitchesuseDG212andDG412positivelogic.This permits independent control of turn-on and turn-offtimes for SPDT con gurations, permitting “break-before-make” or “make-before-break” operation with a minimum ofexternal logic.

TRUTH TABLE

NOTE:

Features

ON Resistance (Max). . . . . . . . . . . . . . . . . . . . . . . . . 35 Low Power Consumption (PD) . . . . . . . . . . . . . . . . . . <35µW Fast Switching Action

-tON(Max) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175ns-tOFF(Max) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145ns Low Charge Injection Upgrade from DG211/DG212 TTL, CMOS Compatible Single or Split Supply Operation

Applications

Audio Switching

Battery Operated Systems Data Acquisition Hi-Rel Systems

Sample and Hold Circuits Communication Systems Automatic Test Equipment

Pinout

DG411, DG412, DG413

(PDIP, SOIC)TOP VIEW

IN1D1S1V-GNDS4D4IN4IN2D2S2V+VLS3D3IN3

Logic “0”≤0.8V.Logic “1”≥2.4V.

Ordering Information

元器件交易网DG411, DG412, DG413 Functional DiagramsIN1 D1 S2 IN2 D2 S3 IN3 D3 S4 IN4 D4 IN4 D4 IN3 D3 S4 IN4 D4 IN2 D2 S3 IN3 D3 S4

Four SPST Switches per Package Switches Shown for Logic“1” InputDG411 S1 IN1 D1 S2 IN2 D2 S3 DG412 S1 IN1 D1 S2 DG413 S1

Schematic DiagramV+

(1 Channel)

S

VVL

V+ INX D

GND V-

Pin DescriptionsPIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 SYMBOL IN1 D1 S1 VGND S4 D4 IN4 IN3 D3 S3 VL V+ S2 D2 IN2 DESCRIPTION Logic Control for Switch 1. Drain (Output) Terminal for Switch 1. Source (Input) Terminal for Switch 1. Negative Power Supply Terminal. Ground Terminal (Logic Common). Source (Input) Terminal for Switch 4. Drain (Output) Terminal for Switch 4. Logic Control for Switch 4. Logic Control for Switch 3. Drain (Output) Terminal for Switch 3. Source (Input) Terminal for Switch 3. Logic Reference Voltage. Positive Power Supply Terminal (Substrate). Source (Input) Terminal for Switch 2. Drain (Output) Terminal for Switch 2. Logic Control for Switch 2.

元器件交易网DG411, DG412, DG413Absolute Maximum RatingsV+ to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44V GND to V-. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V VL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (GND -0.3V) to (V+)+0.3V Digital Inputs, VS, VD (Note 1). . . . . (V-) -2V to (V+)+ 2V or 30mA, Whichever Occurs First Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . 30mA Peak Current, S or D (Pulsed 1ms, 10% Duty Cycle Max) . . 100mA

Thermal InformationThermal Resistance (Typical, Note 2)θJA (oC/W) PDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90 SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 Maximum Junction Temperature (Plastic Packages) . . . . . . . .150oC Maximum Storage Temperature Range . . . . . . . . . . -65oC to 150oC Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC (SOIC - Lead Tips Only)

Operating ConditionsVoltage Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .±20V (Max) Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . -40oC to 85oC Input Low Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8V (Max) Input High Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4V (Min) Input Rise and Fall Time . . . . . . . . . . . . . . . . . . . . . . . . . . . .≤20nsCAUTION: Stresses above those listed in“Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this speci cation is not implied.

NOTES: 1. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. 2.θJA is me

asured with the component mounted on an evaluation PC board in free air.

Electrical Speci cations

Test Conditions: V+=+15V, V-= -15V, VL= 5V, VIN= 2.4V, 0.8V (Note 3), Unless Otherwise Speci ed TEST CONDITIONS TEMP (oC) (NOTE 4) (NOTE 5) (NOTE 4) MIN TYP MAX UNITS

PARAMETER DYNAMIC CHARACTERISTICS Turn-ON Time, tON

RL= 300 , CL= 35pF, VS=±10V (Figure 1)

25 85

-

110 100 25 5 68 -85 9 9 35

175 220 145 160 -

ns ns ns ns ns pC dB dB pF pF pF

Turn-OFF Time, tOFF

25 85

Break-Before-Make Time Delay Charge Injection, Q (Figure 3) OFF Isolation (Figure 5) Crosstalk (Channel-to-Channel), (Figure 4) Source OFF Capacitance, CS(OFF) Drain OFF Capacitance, CD(OFF) Channel ON Capacitance, CD(ON)+ CS(ON) DIGITAL INPUT CHARACTERISTICS Input Current VIN Low, IIL Input Current VIN High, IIH

DG413 Only, RL= 300 , CL= 35pF (Figure 2) CL= 10nF, VG= 0V, RG= 0 RL= 50 , CL= 5pF, f= 1MHz

25 25 25 25

f= 1MHz (Figure 6)

25 25 25

VIN Under Test= 0.8V, All Others= 2.4V VIN Under Test= 2.4V, All Others= 0.8V

Full Full

-0.5 -0.5

0.005 0.005

0.5 0.5

µAµA

ANALOG SWITCH CHARACTERISTICS Analog Signal Range, VANALOG Drain-Source ON Resistance, rDS(ON) IS= IS=±± 10mA 10mA, VD=±8.5V, V+= 13.5V, V-= -13.5V Full 25 Full -15 25 15 35 45 V

元器件交易网DG411, DG412, DG413Electrical Speci cationsTest Conditions: V+=+15V, V-= -15V, VL= 5V, VIN= 2.4V, 0.8V (Note 3), Unless Otherwise Speci ed (Continued) TEST CONDITIONS± V+= 16.5V, V-= -16.5V, VD=±15.5V, VS= 15.5V TEMP (oC) 25 Full 25 Full Channel ON Leakage Current, ID(ON)+ IS(ON) V+= 16.5V, V-= -16.5V, VS= VD=±15.5V 25 Full (NOTE 4) (NOTE 5) (NOTE 4) MIN TYP MAX -0.25 -5 -0.25 -5 -0.4 -10±0.1±0.1±0.1 0.25+5 0.25+5 0.4+10 UNITS nA nA nA nA nA nA

PARAMETER Source OFF Leakage Current, IS(OFF) Drain OFF Leakage Current, ID(OFF)

POWER SUPPLY CHARACTERISTICS Positive Supply Current, I+ V+= 16.5V, V-= -16.5V, VIN= 0V or 5V 25 85 Negative Supply Current, I25 85 Logic Supply Current, IL 25 85 Ground Current, IGND 25 85 -1 -5 -1 -5 0.0001 -0.0001 0.0001 -0.0001 1 5 1 5µAµAµAµAµAµAµAµA

Electrical Speci cations

(Single Supply) Test Conditions: V+=+12V, V-= 0V, VL= 5V, VIN= 2.4V, 0.8V (Note 3), Unless Otherwise Speci ed TEST CONDITIONS TEMP (oC) (NOTE 4) MIN (NOTE 5) TYP (NOTE 4) MAX UNITS

PARAMETER DYNAMIC CHARACTERISTICS Turn-ON Time, tON

RL= 300 , CL= 35pF, VS= 8V, (Figure 1)

25 85 25 85

-

175 95 25 25

250 315 125 140 -

ns ns ns ns ns pC

Turn-OFF Time, tOFF

Break-Before-Make Time Delay Charge Injection, Q

DG413 Only, RL= 300 , CL= 35pF, VS= 8V CL= 10nF, VG= 6.0V, RG= 0

25 25

ANALOG SWITCH CHARACTERISTICS Analog Signal Range, VANALOG Drain-Source ON Resistance, rDS(ON) IS= -10mA, VD= 3V, 8V V+= 10.8V Full 25 Full 0 40 12 80 100 V

元器件交易网DG411, DG412, DG413Electrical Speci cations(Single Supply) Test Conditio

ns: V+=+12V, V-= 0V, VL= 5V, VIN= 2.4V, 0.8V (Note 3), Unless Otherwise Speci ed (Continued) TEST CONDITIONS TEMP (oC) (NOTE 4) MIN (NOTE 5) TYP (NOTE 4) MAX UNITS

PARAMETER POWER SUPPLY CHARACTERISTICS Positive Supply Current, I+

V+= 13.2V, V-= 0V VIN= 0V or 5V

25 85 25 85

-

0.0001 -

1 5 1 5 -

µAµAµAµAµAµAµAµA

Negative Supply Current, I-

-1 -5 -1 -5

-0.0001 0.0001 -0.0001 -

Logic Supply Current, IL

25 85

Ground Current, IGND

25 85

NOTES: 3. VIN= input voltage to perform proper function. 4. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. 5. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

Test Circuits and WaveformsVO is the steady state output with the switch on. Feedthrough via switch capacitance may result in spikes at the leading and trailing edge of the output waveform.3V LOGIC INPUT 50% 0V tOFF SWITCH INPUT VS VO SWITCH OUTPUT 0V tON 90% 90% tr< 20ns tf< 20ns SWITCH INPUT S1 IN1 LOGIC INPUT GND RL V-15V CL+5V VL V+ D1+15V SWITCH OUTPUT VO

NOTE: Logic input waveform is inverted for switches that have the opposite logic sense. FIGURE 1A. MEASUREMENTS POINTS

Repeat test for all IN and S. For load conditions, see Specifications. CL includes fixture and stray RL capacitance. V O= V S ----------------------------------R L+ r DS ( ON ) FIGURE 1B. TEST CIRCUIT

FIGURE 1. SWITCHING TIMES3V LOGIC INPUT VL 0V VS1 90% VS2= 10V 0V VS2 90% SWITCH OUTPUT VO2 0V tD tD IN1, IN2 LOGIC INPUT GND S1 VS1= 10V S2+5V V++15V D1 D2 RL2 300 VO2 RL1 300 VO1 CL1 35pF

SWITCH OUTPUT (V01)

CL2 35pF

V-15V

CL includes xture and stray capacitance.

FIGURE 2A. MEASUREMENT POINTS FIGURE 2. BREAK-BEFORE-MAKE TIME

FIGURE 2B. TEST CIRCUITS

元器件交易网DG411, DG412, DG413 Test Circuits and Waveforms(Continued)

V+ RG D1 VO

SWITCH OUTPUT

VO

INX VG VVIN= 3V CL

OFF

ON

OFF

OFF GND INX

ON Q= VO x CL

OFF

NOTE: INX dependent on switch con guration, input polarity determined by sense of switch. FIGURE 3A. TEST CIRCUIT FIGURE 3. CHARGE INJECTION FIGURE 3B. MEASUREMENT POINTS

C SIGNAL GENERATOR

V+

+15V C 50 SIGNAL GENERATOR V+

+15V

0dBm

VS

VD

0dBm

VS

0V, 2.4V

IN1

IN2

0V, 2.4V

INX

0V, 2.4V

ANALYZER RL

VD C GND V-15V

NC

ANALYZER RL

VD C

GND

V-15V

FIGURE 4. CROSSTALK TEST CIRCUIT+15V C V+

FIGURE 5. OFF ISOLATION TEST CIRCUIT

VS INX IMPEDANCE ANALYZER VD f= 1MHz GND V-15V C 0V, 2.4V

FIGURE 6. SOURCE/DRAIN CAPACITANCES TEST CIRCUIT

元器件交易网DG411, DG412, DG413 Application InformationSingle Supply OperationThe DG411, DG412, DG413 can be operated with unipolar supplies from 5V to 44V. These devices are characterized and tested for single supply operation at 12V to facilitate the majority of applications. To function properly, 12V is tied to Pins 13 and 0V is tied to Pin 4. Pin 12 still requires 5V

for TTL compatible switching.

Summing Ampli erWhen driving a high impedance, high capacitance load such as shown in Figure 7, where the inputs to the summing ampli er have some noise ltering, it is necessary to have shunt switches for rapid discharge of the lter capacitor, thus preventing offsets from occurring at the output.

R1 VIN1

R2

C1 R5

R3 VIN2

R4 VOUT+ R6 C2

DG413

FIGURE 7. SUMMING AMPLIFIER

元器件交易网DG411, DG412, DG413 Typical Performance Curves50 45 40 35 rDS(ON) ( ) 30 25 20 15 10 5 0 -20 -15 -10 -5 0 5 10 30 TA= 25oC 15 20 DRAIN VOLTAGE (V) 0 -55 A: B: C: D: E: F:±5V±8V±10V±12V±15V±20V 240 A 210 180 tON, tOFF (ns) B C D E F 150 120 90 60 tON tOFF V+= 15V, V-= -15V VL= 5V, VS= 10V

-35

-15

5

25

45

65

85

105

125

TEMPERATURE (oC)

FIGURE 8. ON RESISTANCE vs VD AND POWER SUPPLY VOLTAGE

FIGURE 9. SWITCHING TIME vs TEMPERATURE

40 30 20 10 IS, ID (pA) 0 -10 -20 -30 -40 ID(OFF) ISUPPLY IS(OFF) ID(ON)+ IS(ON) V+= 15V, V-= -15V VL= 5V, TA= 25oC

100mA 10mA 1mA 100µA 4SW 10µA IL 1µA 100nA 4SW V+= 15V, V-= -15V VL= 5V

I+, I-

-50 -60 -15 -10 -5 0 VS, VD (V) 5 10 15 10nA 10

1SW 100

1SW 1K 10K 100K 1M 10M

FREQUENCY (Hz)

FIGURE 10. LEAKAGE CURRENTS vs ANALOG VOLTAGE

FIGURE 11. SUPPLY CURRENT vs INPUT SWITCHING FREQUENCY

100 80 60 V+= 15V, V-= -15V VL= 5V

140 120 100 80 CL= 1nF V+= 15V, V-= -15V VL= 5V CL= 10nF

40 Q (pC) Q (pC) CL= 10nF 20 0 -20 -40 -60 -15 -10 -5 0 VS (V) 5 10 15 CL= 1nF

60 40 20 0 -20 -40 -60 -15 -10 -5 0 VD (V) 5 10 15

FIGURE 12. CHARGE INJECTION vs SOURCE VOLTAGE

FIGURE 13. CHARGE INJECTION vs DRAIN VOLTAGE

元器件交易网

DG411, DG412, DG413