VMM650-01F中文资料

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Dual Power

HiPerFETTM Module

Phaseleg ConfigurationPreliminary Data

89111067

NTC

21

VDSS= 100 VID25= 680 ARDS(on)= 1.8 m

3

SymbolVDSSVGSID25ID80IF25IF80

TC = 25°CTC = 80°C(diode) TC = 25°C(diode) TC = 80°C

①①①①

ConditionsTVJ = 25°C to 150°C

Maximum Ratings

100±20680500680500

VVAAAA

Features

HiPerFET TM technology– low RDSon

– unclamped inductive switching (UIS)capability

– dv/dt ruggedness

– fast intrinsic reverse diode– low gate charge thermistor

for internal temperature measurement package

– low inductive current path

– screw connection to high currentmain terminals

– use of non interchangeable

connectors for auxiliary terminalspossible

– Kelvin source terminals for easy drive– isolated DCB ceramic base plate

SymbolConditions

Characteristic Values

(T

= 25°C, unless otherwise specified)

Applications

converters with high power density for– main and auxiliary AC drives ofelectric vehicles

– 4 quadrant DC drives– power supplies

IXYS reserves the right to change limits, test conditions and dimensions.

© 2004 IXYS All rights reserved

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