P4C198L-25PMB中文资料(3)

POWER DISSIPATION CHARACTERISTICS VS. SPEED

Symbol

Parameter

Temperature

Range

CommercialIndustrialMilitary

198: CE = VIL, OE = VIH

198A: CE1 = VIL, CE2 = VIL. OE = VIH

–10180N/AN/A

–12170180N/A

–15160170170

–20155160160

–25150155155

–35N/A150150

–45N/AN/A145

UnitmAmAmA

ICC

Dynamic Operating Current*

*VCC = 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V.

DATA RETENTION CHARACTERISTICS (P4C198L/P4C198AL Military Temperature Only)

SymbolVDRICCDRtCDRtR

*TA = +25°C

§

ParameterVCC for Data RetentionData Retention CurrentChip Deselect toData Retention TimeOperation Recovery Time

Test ConditionMin2.0

Typ.*VCC=2.0V3.0V10

15

Max

VCC=2.0V3.0V600

900

UnitVµAnsns

CE≥VCC – 0.2V,

VIN ≥ VCC – 0.2V orVIN ≤ 0.2V

0tRC§

tRC = Read Cycle Time

This parameter is guaranteed but not tested.

DATA RETENTION WAVEFORM

Document # SRAM113 REV APage 3 of 13