P4C198/198L, P4C198A/198AL
AC CHARACTERISTICS—READ CYCLE
(VCC = 5V ± 10%, All Temperature Ranges)(2)
-10
Sym.tRCtAAtACtOHtLZtHZtOEtOLZ
ParameterRead Cycle TimeAddress AccessTimeChip EnableAccess TimeOutput Hold fromAddress ChangeChip Enable toOutput in Low ZChip Disable toOutput in High ZOutput EnableLow to Data ValidOutput Enable toOutput in Low Z
2
60
10
22
66
2
10
1010
2212
-12-15
151212
227 7
27
12
159
089
2
1515
2220
-20
252020
22
1012
29
20
-25
352525
22
1015
2
10
25
-35
453535
22
1425
2
14
35
-45
ns4545
nsnsnsns1530
nsnsns15
nsns45
ns
MinMaxMin
MaxMinMaxMinMaxMinMaxMinMaxMinMaxUnit
tOHZOutput Disable to
Output in High ZtPUtPD
Chip Enable toPower Up TimeChip Disable toPower Down Time
READ CYCLE NO.1 (OEOE controlled)(5)
Notes:
5.WE is HIGH for READ cycle.
Document # SRAM113 REV APage 4 of 13