ES-CEBLV10Z 晶元 10X20 芯片规格书

ES-CEBLV10ZInGaN Venus Blue LED Chip> Mechanical Specification:(1) Dimension - Chip size: 10 mil x 20 mil (260 ± 25 µm x 500 ± 25 µm) - Thickness: 3.9 mil (100 ± 10 µm) - P bonding pad: 2.8 mil (70 ± 10 µm) - N bonding pad: 2.8 mil (70 ± 10 µm) (2) Metallization - Topside P electrode: Au alloy - Topside N electrode: Au alloy Features: High radiant flux 100% probing test Passivation layer on top Long operation life Applications: Lighting Backlighting Mobile appliances Consumer electronicPN> Electro-optical Characteristics at 25°C: (1) °Parameter Symbol Vf1 Forward Voltage Vf2 Reverse Current Dominant Wavelength Spectra Half-width(2)Condition If = 10µA If = 20mA Vr = 5V If = 20mA If = 20mA P23Min. 2.0 2.8 455 24.5Typ. 25 -Max. 3.8 2.0 465 26.0Unit V V μA nm nmIr λd ΔλRadiant Flux(3)(4)Po P24If = 20mA 26.0 27.5mWNote: (1) ESD protection during chip handling is recommended. (2) Basically, the wavelength span is 10nm; however, customers’ special requirements are also welcome. (3) Radiant flux is determined by using an Ag-plated TO-can header without an encapsulant. (4) Radiant flux measurement allows a tolerance of ±15%.COPYRIGHT ©2012 Epistar Corporation. All Rights Reserved.