Power will be the key limiter to system scalability as interconnection networks take up an increasingly significant portion of system power. In this paper, we propose an architectural leakage power modeling methodology that achieves 95-98 % accuracy agains
Sotoderiveanarchitecturalleakagepowermodel,we
cantransistorseparateprocesstechnology:
widththefromtechnology-independentthosethatstayinvariantvariablesforasuchspeci casIleak(i,s)=
W(type(i,s))L
·I
leak(i,s)
(3)
whereIleakagecurrent.I
leakistotalleakisleakagecur-rentperunittransistorwidthoverlength.W(type(i,s))referstothetransistorwidthofNMOSwhenNMOSdeter-minestheleakagecurrent(i.e.type(i,s)isN),orPMOS(whentype(i,s)isP).Astransistorwidthhasanegligi-blee ectonI
leak(i,s),Ileak(i,s)is xedforagivencircuittypeandinputstateundercertaintechnologyandature.Withthisapproximation,armedwithI
temper-leakforvar-iouskindsofcircuitcomponentsatdi erentinputstates,architectscanestimatetheleakagepowerforarchitecturalunitscomposedfromthesecircuitcomponents.Ourpro-posedmodelingmethodologyisasfollows:
1.Identifythefundamentalcircuitcomponents,andde-riveI
leak(i,s)foreachatdi erentinputstates.Exam-plesaresingleNMOSandPMOStransistors,NANDgates,inverters,etc.2.De nemajorarchitecturalbuildingblocks.Forinter-connectionnetworks,typicalbuildingblockswillbebu ers,crossbars,arbitersandlinks[9].Formicro-processors,suitablebuildingblockswillbecachelines,adders,etc.3.Identifythedistributionoftheinputstatesbasedonoperationcharacteristicsorsimulationandderivear-chitecturalequationsthatestimatetheleakagepowerforeachbuildingblock.Webelievethisisthe rstleakagepowermodelingmethod-ologythattrulyseparatestechnology-dependentandinde-pendentvariables.In[2],asinglekdesignisusedtore ectthecompositionofdevicetypes(N/P),geometries(W/L),states(on/o ),andstackingfactors.Asaresult,kdesignisextremelysensitivetochangesinanyofthevariablesandtheimpactofarchitecturalparametershardtoisolate.In
[6],Pleaklib
=χlib·CellsSlib
isusedtoestimatetheleak-agepowerinanASICdesignenvironment,whereχlib,Slibaretechnology-dependentparametersderivedthroughex-perimentsand”Cells”isthenumberofcellsinthedesign.Thismodeltargetsalaterdesignstagethenthearchitec-turalstage,whendesignersexplorevariouscircuitdesignsforaselectedarchitecture.
2.1DerivationofI
leak
Foreachcomponenti,wesimulateI
leak(i,s)usingHSPICEandtheBerkeleyPredictiveTechnologyModel[1]fortherangeofprocesstechnologiesandassociatedparametersinTable1.Table2liststheI
listed
leak(i,s)simulatedforeachfun-damentalcircuitcomponenti(Leakagecurrentsdi ersatdi erentstatesduetostakingandbodybiase ects).Cir-cuitstructurescanthenbehierarchicallycomposedfromthesefundamentalcircuitcomponents.
Table1:Parametersforvarioustechnologies.
th0dd
Table2:Ileak(i,s)foreachfundamentalcircuitcompo-
nentiatdi erentinputstatessattemperature80oC.Type(i,s)indicatesiftheNMOSorPMOStransistorisdominantindeterminingleakagecurrent.
I(i,s)
i
s(i,s)1P4.0e-99.7e-980.4e-901N7.9e-910.8e-946.0e-910N4.7e-95.1e-944.0e-911P8.1e-919.4e-9159.5e-901P3.6e-95.9e-945.3e-910P4.3e-99.7e-977.5e-911
P
0.9e-90.7e-9
5.9e-9
Figure1:AFIFObu erwith1readportand1write
port(adaptedfrom[4]).Tcisthepre-chargingtransis-tor,Twdthewordlinedriver,Tbdthewritebitlinedriver,Tmthememorycellinverter,andTprandTpwthepasstransistorsconnectingreadandwriteportstomemorycellsrespectively.
2.2Leakagepowermodelingofrouterbuffers
Weappliedourmethodologytothemajorbuildingblocksofinterconnectionnetworksasidenti edin[9]–bu ers,crossbars,arbiters,andlinks.Here,wewalkthroughourmodelingofrouterbu erstodemonstratethemethodology.Fig.1sketchesthecircuitstructureofarouterbu erpoolwithB it1bu ers,eachFbitswide,withPrreadportsandPwwriteports.ItshowsaFIFObu erthatiscomposedofthefundamentalcircuitcomponentsofPMOS,NMOStransistorsandinverters.Dimensionsofthecircuitstruc-turesuchashcell,wcell,dwareestimatedbyOrion[9]fromarchitecturalparameters.
Inputstateprobabilisticanalysis.Next,weanalyzetheprobabilitydistributionofeachinputstateofacircuitcomponentbyexamininghowarchitecturalunitsfunction.Forinstance,thewordlineinverterTwdisset(s=0)wheneverthatbu er/rowisreadorwritten.Thus,atanypointintime,onlyoneoutofBwordlineinverterswillbe
set.Hence,Ileak(Twd)=1W(type(INV,0))
·I leak(INV,0)+B 1W(type(INV,1)) ·Ileak(INV,1).Basically,giventheseI
leak(i,s),andtheprobabilitiesof1
segmentA itisofshortapacket.
for owcontrolunit,andisa xed-length